NTH4L080N120SC1

536.00625.00 (-14%)

310 in stock

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 29 A, 1.2 kV, 0.08 ohm, TO-247
SKU: IEC2880 Category:

Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.

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