K120T60 IGBT Transistor 600V, 120A
₹499.00₹513.00 (-3%)
- Very low VCE(sat )1.5V(typ.)
- Maximum junction temperature 175°C
- Short circuit withstand time 5µs
- Very tight parameter distribution
- High ruggedness,temperature stable behavior
- High switching speed
- Positive temperature coefficient in VCE(sat)
- Low EMI
- Low gate charge QG
- Increased current capability
- Very soft,fast recovery Anti-Parallel Emitter Controlled HE diode
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used…
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.
| Model | K120T60 |
| Type | IGBT Transistor |
| Package Type | TO247 |
| Collector-emitter voltage | 600 V |
| Dc collector current | 160 A @ 25°C |
| Diode forward current | 160 A |
| Gate-emitter voltage | ±20 V |
| Power Dissipation Tc=25°C | 833.0 W |
| Gate-emitter leakage current | 100 nA |
| DC collector current | 120.0A |
Reviews
There are no reviews yet.